DocumentCode :
549660
Title :
Matching cache access behavior and bit error pattern for high performance low Vcc L1 cache
Author :
Choi, Young Geun ; Yoo, Sungjoo ; Lee, Sunggu ; Ahn, Jung Ho
Author_Institution :
Dept. of Electron. & Electr. Eng., POSTECH, Pohang, South Korea
fYear :
2011
fDate :
5-9 June 2011
Firstpage :
978
Lastpage :
983
Abstract :
Cache is a roadblock towards low supply voltage (Vcc). It is mainly because low Vcc incurs process variation-induced bit errors in large SRAM in cache. Existing approaches for low Vcc cache suffer from low performance due to reduced effective capacity, long latency to correct errors, and increased misses due to accesses to faulty words. In our work, we propose a word-level sub-block disable-based method which increases the utilization of available cache capacity. Our key idea is to minimize accesses to faulty words. To do that, we propose utilizing access behavior history in allocating cache resource with faulty words. In addition, we propose remapping cache words inside of cache line in order to better match both access and error patterns. Experimental results show that the proposed method gives average 21.8% (up to 34.0%) performance improvement with a small area overhead in L1 and L2 caches.
Keywords :
SRAM chips; cache storage; resource allocation; SRAM; Vcc L1 cache; bit error pattern; cache access behavior matching; cache resource allocation; process variation-induced bit errors; supply voltage; word-level sub-block disable-based method; Art; Error analysis; Error correction; Error correction codes; Pattern matching; Random access memory; Sensitivity analysis; Cache; Vccmin; access pattern; bit error;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design Automation Conference (DAC), 2011 48th ACM/EDAC/IEEE
Conference_Location :
New York, NY
ISSN :
0738-100x
Print_ISBN :
978-1-4503-0636-2
Type :
conf
Filename :
5982018
Link To Document :
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