• DocumentCode
    549660
  • Title

    Matching cache access behavior and bit error pattern for high performance low Vcc L1 cache

  • Author

    Choi, Young Geun ; Yoo, Sungjoo ; Lee, Sunggu ; Ahn, Jung Ho

  • Author_Institution
    Dept. of Electron. & Electr. Eng., POSTECH, Pohang, South Korea
  • fYear
    2011
  • fDate
    5-9 June 2011
  • Firstpage
    978
  • Lastpage
    983
  • Abstract
    Cache is a roadblock towards low supply voltage (Vcc). It is mainly because low Vcc incurs process variation-induced bit errors in large SRAM in cache. Existing approaches for low Vcc cache suffer from low performance due to reduced effective capacity, long latency to correct errors, and increased misses due to accesses to faulty words. In our work, we propose a word-level sub-block disable-based method which increases the utilization of available cache capacity. Our key idea is to minimize accesses to faulty words. To do that, we propose utilizing access behavior history in allocating cache resource with faulty words. In addition, we propose remapping cache words inside of cache line in order to better match both access and error patterns. Experimental results show that the proposed method gives average 21.8% (up to 34.0%) performance improvement with a small area overhead in L1 and L2 caches.
  • Keywords
    SRAM chips; cache storage; resource allocation; SRAM; Vcc L1 cache; bit error pattern; cache access behavior matching; cache resource allocation; process variation-induced bit errors; supply voltage; word-level sub-block disable-based method; Art; Error analysis; Error correction; Error correction codes; Pattern matching; Random access memory; Sensitivity analysis; Cache; Vccmin; access pattern; bit error;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference (DAC), 2011 48th ACM/EDAC/IEEE
  • Conference_Location
    New York, NY
  • ISSN
    0738-100x
  • Print_ISBN
    978-1-4503-0636-2
  • Type

    conf

  • Filename
    5982018