• DocumentCode
    549680
  • Title

    Forming-free nitrogen-doped AlOX RRAM with sub-μA programming current

  • Author

    Kim, Wanki ; Park, Sung Il ; Zhang, Zhiping ; Yang-Liauw, Young ; Sekar, Deepak ; Wong, H. -S Philip ; Wong, S. Simon

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2011
  • fDate
    14-16 June 2011
  • Firstpage
    22
  • Lastpage
    23
  • Abstract
    Nitrogen-doped AlOX Resistive RAM has been integrated on CMOS. The memory cell requires no forming, and sub-μA programming currents. The cell is capable of multi-bit storage, reliable for over 105 switching cycles and 10 years retention at 125°C.
  • Keywords
    aluminium compounds; nitrogen; random-access storage; N:AlOX; memory cell; multibit storage; resistive RAM; sub-μA programming currents; temperature 125 degC; time 10 year; CMOS integrated circuits; Electrodes; Films; Nitrogen; Programming; Resistance; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2011 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4244-9949-6
  • Type

    conf

  • Filename
    5984614
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=549680