DocumentCode :
549680
Title :
Forming-free nitrogen-doped AlOX RRAM with sub-μA programming current
Author :
Kim, Wanki ; Park, Sung Il ; Zhang, Zhiping ; Yang-Liauw, Young ; Sekar, Deepak ; Wong, H. -S Philip ; Wong, S. Simon
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear :
2011
fDate :
14-16 June 2011
Firstpage :
22
Lastpage :
23
Abstract :
Nitrogen-doped AlOX Resistive RAM has been integrated on CMOS. The memory cell requires no forming, and sub-μA programming currents. The cell is capable of multi-bit storage, reliable for over 105 switching cycles and 10 years retention at 125°C.
Keywords :
aluminium compounds; nitrogen; random-access storage; N:AlOX; memory cell; multibit storage; resistive RAM; sub-μA programming currents; temperature 125 degC; time 10 year; CMOS integrated circuits; Electrodes; Films; Nitrogen; Programming; Resistance; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
ISSN :
0743-1562
Print_ISBN :
978-1-4244-9949-6
Type :
conf
Filename :
5984614
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=549680
بازگشت