Highly reliable and fast nonvolatile hybrid switching ReRAM memory using thin Al2O3 demonstrated at 54nm memory array

Author

Yi, Jaeyun ; Choi, Hyejung ; Lee, Seunghwan ; Lee, Jaeyeon ; Son, Donghee ; Lee, Sangkeum ; Hwang, Sangmin ; Song, Seokpyo ; Park, Jinwon ; Kim, Sookjoo ; Kim, Wangee ; Kim, Ja-Yong ; Lee, Sunghoon ; Moon, Jiwon ; You, Jinju ; Joo, Moonsig ; Roh, JaeSung

Author_Institution

R&D Div., Hynix Semicond. Inc., Icheon, South Korea

fYear

2011

fDate

14-16 June 2011

Firstpage

48

Lastpage

49

Abstract

For the first time, very fast (10ns at even Reset) and high reliable (150°C 100h) ReRAM memory was demonstrated at 54 nm 256k bits array. Reset current successfully decreased up to 20uA using Al₂O₃ which acts as a tunnel barrier and filament source in TiO₂/Al₂O₃ stack. From statistical analysis, the possibility of increasing array size and the key factor of resistance distribution were investigated.

Keywords

aluminium compounds; integrated circuit reliability; random-access storage; statistical analysis; TiO₂-Al₂O₃; filament source; high-reliable ReRAM memory; memory array; nonvolatile hybrid switching ReRAM memory; resistance distribution; size 54 nm; statistical analysis; temperature 150 degC; time 100 h; tunnel barrier; Aluminum oxide; Arrays; Reliability; Resistance; Resistors; Switches; Very large scale integration; 1T1R; Resistive switching; bipolar;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2011 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4244-9949-6

Type

conf

Filename

5984626