CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding

Author

Yokoyama, M. ; Kim, S.H. ; Zhang, R. ; Taoka, N. ; Urabe, Y. ; Maeda, T. ; Takagi, H. ; Yasuda, T. ; Yamada, H. ; Ichikawa, O. ; Fukuhara, N. ; Hata, M. ; Sugiyama, M. ; Nakano, Y. ; Takenaka, M. ; Takagi, S.

Author_Institution

Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan

fYear

2011

fDate

14-16 June 2011

Firstpage

60

Lastpage

61

Abstract

We have successfully demonstrated the CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-InGaAs and Ni-Ge metal source/drain (S/D) on a Ge substrate, by using direct wafer bonding (DWB), for the first time. Ni-based metal S/D allows us to fabricate high performance nMOSFETs and pMOSFETs simultaneously at the single-step S/D formation process. The fabricated InGaAs nMOSFET and Ge pMOSFET have exhibited the high electron and hole mobilities of 1800 and 260 cm²/Vs and the mobility enhancement against Si of 3.5× and 2.3×, respectively.

Keywords

CMOS integrated circuits; III-V semiconductors; MOSFET; electron mobility; elemental semiconductors; gallium compounds; germanium; hole mobility; indium compounds; nickel; wafer bonding; CMOS integration; Ge; Ni-Ge; Ni-InGaAs; direct wafer bonding; germanium substrate; high-electron mobility; hole mobility; metal source-drain; nMOSFET; pMOSFET; self-align nickel-based metal S-D; single-step S-D formation process; Aluminum oxide; CMOS integrated circuits; Indium gallium arsenide; Logic gates; MOSFETs; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2011 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4244-9949-6

Type

conf

Filename

5984632