Exact control of junction position and Schottky barrier height in dopant-segregated epitaxial NiSi2 for high performance metal source/drain MOSFETs

This paper reports junction position control and the Schottky barrier height (Φ_Bn) tuning in ultrathin SOI MOSFETs with epitaxial NiSi₂ source/drain (S/D). We demonstrate the junction position control in the lateral direction with preserving the (111) facet in 8-nm-thick SOI using epitaxial NiSi₂ growth. Φ_Bn at epitaxial NiSi₂ can be easily controlled by P⁺ implanted dose using dopant segregation technique, and the saturation drain current (I_DSat.) increases due to lowering Φ_Bn. Thus, epitaxial NiSi₂ is a promising metal S/D for future MOSFETs.