Title :
Endurance and scaling trends of novel access-devices for multi-layer crosspoint-memory based on mixed-ionic-electronic-conduction (MIEC) materials
Author :
Shenoy, R.S. ; Gopalakrishnan, K. ; Jackson, B. ; Virwani, K. ; Burr, G.W. ; Rettner, C.T. ; Padilla, A. ; Bethune, D.S. ; Shelby, R.M. ; Kellock, A.J. ; Breitwisch, M. ; Joseph, E.A. ; Dasaka, R. ; King, R.S. ; Nguyen, K. ; Bowers, A.N. ; Jurich, M. ; Fr
Author_Institution :
Almaden Res. Center, IBM, San Jose, CA, USA
Abstract :
We demonstrate compact integrated arrays of BEOL-friendly novel access devices (AD) based on Cu-containing MIEC materials. In addition to the high current densities and large ON/OFF ratios needed for Phase Change Memory (PCM), scaled-down ADs also exhibit larger voltage margin Vm, ultra-low leakage (<;10pA), and much higher endurance (>;108) at high current densities. Using CMP, all-good 5×10 AD arrays with Vm >; 1.1V are demonstrated in a simplified CMOS-compatible diode-in-via (DIV) process.
Keywords :
CMOS memory circuits; current density; ionic conductivity; phase change memories; AD arrays; BEOL-friendly access devices; CMP; MIEC materials; PCM; compact integrated arrays; current densities; diode-in-via process; mixed-ionic-electronic-conduction materials; multilayer crosspoint memory; on-off ratios; phase change memory; scaled-down AD; simplified CMOS-compatible DIV process; Current density; FETs; Phase change materials; Very large scale integration; Voltage measurement; Access device; MIEC; MRAM; NVM; PCM; RRAM;
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-9949-6
