Title :
Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming gigabyte-per-second throughput
Author :
Sasago, Y. ; Kinoshita, M. ; Minemura, H. ; Anzai, Y. ; Tai, M. ; Kurotsuchi, K. ; Morita, S. ; Takahashi, T. ; Takahama, T. ; Morimoto, T. ; Mine, T. ; Shima, A. ; Kobayashi, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer deposited directly on the channel silicon layer in the PCM enables low-current reset operation (45 μA) compared to the conventional memory structure. This memory-cell configuration enables both a poly-Si MOS-driven stackable memory array and large degree programming parallelization. A contactless simple cell structure makes it possible to reduce the cell size to 4F2 and the number of process steps. Low cost and gigabyte-per-second programming throughput are thus made possible by this stackable phase-change memory.
Keywords :
MOSFET; elemental semiconductors; phase change materials; phase change memories; silicon; PCM; Si; channel silicon layer; current 45 muA; high-programming gigabyte-per-second throughput; low-current reset operation; memory cell configuration; poly-silicon MOS transistor; programming parallelization; stackable phase change memory; thin phase change material layer; Films; Logic gates; MOSFETs; Phase change materials; Resistance; Silicon; phase-change memory; poly-Si MOS; stackable;
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-9949-6
