DocumentCode :
549721
Title :
Design challenges of low-power and high-speed memory interface in advanced CMOS technology
Author :
Frans, Yohan ; Schmitt, Ralf ; Nguyen, Nhat ; Bhardwaj, Sunil ; Bronner, Gary
Author_Institution :
Rambus Inc., Sunnyvale, CA, USA
fYear :
2011
fDate :
14-16 June 2011
Firstpage :
110
Lastpage :
111
Abstract :
Design requirements for low-power and high-speed memory interfaces in mobile systems are discussed within the context of CMOS process scaling. Key challenges include process variations, low Vdd/Vth ratio, interconnect parasitics, and model accuracy of key process parameters. It is shown that careful system architecture along with appropriate circuit techniques allow mobile memory interface to meet aggressive performance and power targets with conventional technology.
Keywords :
CMOS memory circuits; integrated circuit design; integrated circuit interconnections; low-power electronics; mobile radio; CMOS process scaling; advanced CMOS technology; design requirements; high-speed memory interface; interconnect parasitics; low-power memory interface; mobile systems; process variations; Capacitance; Clocks; Memory management; Mobile communication; Process control; Random access memory; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
ISSN :
0743-1562
Print_ISBN :
978-1-4244-9949-6
Type :
conf
Filename :
5984664
Link To Document :
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