DocumentCode :
549732
Title :
Suppression of VT variability degradation induced by NBTI with RDF control
Author :
Tsunomura, T. ; Nishimura, J. ; Kumar, A. ; Nishida, A. ; Inaba, S. ; Takeuchi, K. ; Hiramoto, T. ; Mogami, T.
Author_Institution :
MIRAI-Selete, Tsukuba, Japan
fYear :
2011
fDate :
14-16 June 2011
Firstpage :
150
Lastpage :
151
Abstract :
VT variability degradation induced by negative bias temperature instability (NBTI) and its relation with random dopant fluctuation (RDF) are investigated by a special large-scale (16000 PFETs) device matrix array (DMA) TEG exclusive for NBTI variability measurements. It is clarified that VT variability degradation is suppressed by reducing channel or halo dopant concentration. The suppression mechanism is discussed in terms of channel potential fluctuation caused by RDF.
Keywords :
VLSI; integrated circuit reliability; DMA TEG; NBTI; RDF control; channel potential fluctuation; device matrix array; halo dopant concentration; negative bias temperature instability; random dopant fluctuation; variability degradation suppression; Degradation; Fluctuations; Resource description framework; Stress; Stress measurement; Time measurement; Very large scale integration; Channel dopant; Halo; NBTI; VT variability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
ISSN :
0743-1562
Print_ISBN :
978-1-4244-9949-6
Type :
conf
Filename :
5984679
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=549732
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