Title :
From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation
Author :
Toledano-Luque, M. ; Kaczer, B. ; Franco, J. ; Roussel, Ph J. ; Grasser, T. ; Hoffmann, T.Y. ; Groeseneken, G.
Author_Institution :
imec, Leuven, Belgium
Abstract :
Based on detailed understanding of behavior and statistics of individual defects, a new methodology to predict the BTI lifetime distributions in deeply scaled FETs was presented. Moreover, the sources of time dependent variability was identified, some of which can be addressed technologically.
Keywords :
field effect transistors; semiconductor device reliability; statistics; BTI lifetime distribution; deeply scaled FET; statistics; time dependent variability; Dielectrics; Exponential distribution; FETs; Logic gates; Reliability; Stress; Very large scale integration;
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-9949-6
