• DocumentCode
    549733
  • Title

    From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation

  • Author

    Toledano-Luque, M. ; Kaczer, B. ; Franco, J. ; Roussel, Ph J. ; Grasser, T. ; Hoffmann, T.Y. ; Groeseneken, G.

  • Author_Institution
    imec, Leuven, Belgium
  • fYear
    2011
  • fDate
    14-16 June 2011
  • Firstpage
    152
  • Lastpage
    153
  • Abstract
    Based on detailed understanding of behavior and statistics of individual defects, a new methodology to predict the BTI lifetime distributions in deeply scaled FETs was presented. Moreover, the sources of time dependent variability was identified, some of which can be addressed technologically.
  • Keywords
    field effect transistors; semiconductor device reliability; statistics; BTI lifetime distribution; deeply scaled FET; statistics; time dependent variability; Dielectrics; Exponential distribution; FETs; Logic gates; Reliability; Stress; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2011 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4244-9949-6
  • Type

    conf

  • Filename
    5984680
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=549733