Investigation of the self-heating effect on hot-carrier characteristics for packaged high voltage devices

Author

Huang, H.J. ; Huang, Y. -H ; Liu, C.C. ; Shih, J.R. ; Lee, Y. -H ; Ranjan, R. ; Leu, L. ; Wu, D.J. ; Wu, Kenneth

Author_Institution

TQRD, Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan

fYear

2011

fDate

14-16 June 2011

Firstpage

154

Lastpage

155

Abstract

HVNMOS device degradation due to AC/DC hot carrier injection (HCI) stress between package level (PL) and wafer level (WL) is characterized and their relationship to the power generation is quantified. It is observed that I_dlin degradation in PL is worse compared to WL during DC HCI stress due to excessive self-heating (SH) in PL compared to WL. It is also validated that SH mechanism is the dominant factor for I_dlin degradation compared to HCI impact ionization during packaged HVNMOS HCI stress. A new reliability characterization methodology for HVNMOS is also proposed, which eliminates the PL SH effect and boost up the product safe-operating-area (SOA) capability.

Keywords

MOS integrated circuits; hot carriers; ionisation; wafer level packaging; AC-DC hot carrier injection; HCI stress; HVNMOS device degradation; hot-carrier characteristics; package level; packaged high voltage devices; safe-operating-area capability; self-heating effect; wafer level; Degradation; Delay; Human computer interaction; Stress; Stress measurement; Temperature; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2011 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4244-9949-6

Type

conf

Filename

5984681