• DocumentCode
    549743
  • Title

    3D approaches for non-volatile memory

  • Author

    Choi, Jungdal ; Seol, Kwang Soo

  • Author_Institution
    Semicond. R&D Center, Samsung Electron. Co., Ltd., Hwasung, South Korea
  • fYear
    2011
  • fDate
    14-16 June 2011
  • Firstpage
    178
  • Lastpage
    179
  • Abstract
    The NAND flash market is continuously growing by the successive introduction of innovative devices and applications. To meet the market trend, 3-dimenstional (3D) non-volatile memories (NVMs) are expected to replace the planar one, especially for 10 nm-nodes and beyond. Therefore, the fundamentals and current status of the 3D NAND flash memory are reviewed and future directions are discussed.
  • Keywords
    NAND circuits; flash memories; random-access storage; three-dimensional integrated circuits; 3-dimenstional NVM; 3D NAND flash memory; 3D nonvolatile memory; Couplings; Flash memory; Lithography; Logic gates; Materials; Nonvolatile memory; Three dimensional displays; NAND flash and 3D NVMs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2011 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4244-9949-6
  • Type

    conf

  • Filename
    5984694
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=549743