Title :
Proposal of a model for increased NFET random fluctuations
Author :
Takeuchi, Kiyoshi ; Nishida, Akio ; Kamohara, Shiro ; Hiramoto, Toshiro ; Mogami, Tohru
Author_Institution :
MIRAI-Selete, Tsukuba, Japan
Abstract :
It is shown, using kinetic Monte Carlo simulation, that variability in the amount of point defects created by source/drain (S/D) implantation can significantly increase NFET random fluctuation through the modulation of boron transient enhanced diffusion (TED). This model is consistent with reported NFET fluctuation behavior.
Keywords :
Monte Carlo methods; boron; diffusion; field effect transistors; S-D implantation; TED; boron transient enhanced diffusion; increased NFET random fluctuations; kinetic Monte Carlo simulation; point defects; source-drain implantation; Boron; Fluctuations; Modulation; Resource description framework; Semiconductor process modeling; Silicon; Simulation;
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-9949-6
