Title :
A 550µW inductorless bandpass quantizer in 65 nm CMOS for 1.4-to-3GHz digial RF receivers
Author :
Lachartre, David
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
This paper presents an inductorless clockless RF bandpass quantizer in a standard 65nm CMOS technology. An entirely new approach is used based on the information sign and envelope of the RF signal. The quantizer achieves a SNDR of 34dB for an 80MHz bandwidth within a frequency range of 1.4 to 3GHz while consuming 550μW and occupying 0.04mm2. A FOM of 64fJ/conv is a 45-fold improvement over previous art.
Keywords :
CMOS integrated circuits; quantisation (signal); radio receivers; CMOS technology; RF signal; SNDR; bandwidth 80 MHz; digial RF receivers; envelope; frequency 1.4 GHz to 3 GHz; frequency range; inductorless bandpass quantizer; inductorless clockless RF bandpass quantizer; information sign; noise figure 34 dB; power 550 muW; size 65 nm; Very large scale integration; ADC; Quantizer; RF bandpass; inductorless;
Conference_Titel :
VLSI Circuits (VLSIC), 2011 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-61284-175-5
