4-times faster rising VPASS (10V), 15% lower power VPGM (20V), wide output voltage range voltage generator system for 4-times faster 3D-integrated solid-state drives

A wide output voltage, V_OUT, range from 10V to 20V voltage generator system is proposed for the 3D-integrated NAND flash Solid-State Drives, SSDs. The circuits are fabricated with the smart mix and match of the 0.18um standard CMOS, the low voltage and high voltage NAND flash memory technologies. The two-stage boost converter is proposed for the program pass voltage, V_PASS, in the lower V_OUT, 10V, and the heavy load capacitance, C_OUT, condition. The measured rising time is four times shorter than the conventional single-stage boost converter. In addition, the constant current boosting scheme is proposed for the program voltage, V_PGM, in the higher V_OUT, 20V, and the light C_OUT condition. The power consumption decreases by 15%. As a result, the SSD performance improves by 4 times.