Title :
A true random number generator using time-dependent dielectric breakdown
Author :
Liu, Nurrachman ; Pinckney, Nathaniel ; Hanson, Scott ; Sylvester, Dennis ; Blaauw, David
Author_Institution :
Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
A true random number generator (tRNG) is proposed that, for the first time, uses the random physical process of time to oxide breakdown under voltage stress. Time to breakdown is repeatedly measured with a counter and serialized into a bitstream. The 1200 μm2 tRNG, called OxiGen, was fabricated in 65 nm CMOS, passes all 15 NIST randomness tests without post-processing and in a 3 month run generated sufficient bits for worst-case expected internet use while being <;10% exhausted.
Keywords :
CMOS integrated circuits; cryptography; electric breakdown; random number generation; CMOS; NIST randomness test; OxiGen; bitstream; cryptography; random number generator; size 65 nm; time-dependent dielectric breakdown; time-to-breakdown; time-to-oxide breakdown; voltage stress; worst-case expected Internet use; Arrays; Electric breakdown; Generators; NIST; Radiation detectors; Stress;
Conference_Titel :
VLSI Circuits (VLSIC), 2011 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-61284-175-5
