• DocumentCode
    549846
  • Title

    A true random number generator using time-dependent dielectric breakdown

  • Author

    Liu, Nurrachman ; Pinckney, Nathaniel ; Hanson, Scott ; Sylvester, Dennis ; Blaauw, David

  • Author_Institution
    Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2011
  • fDate
    15-17 June 2011
  • Firstpage
    216
  • Lastpage
    217
  • Abstract
    A true random number generator (tRNG) is proposed that, for the first time, uses the random physical process of time to oxide breakdown under voltage stress. Time to breakdown is repeatedly measured with a counter and serialized into a bitstream. The 1200 μm2 tRNG, called OxiGen, was fabricated in 65 nm CMOS, passes all 15 NIST randomness tests without post-processing and in a 3 month run generated sufficient bits for worst-case expected internet use while being <;10% exhausted.
  • Keywords
    CMOS integrated circuits; cryptography; electric breakdown; random number generation; CMOS; NIST randomness test; OxiGen; bitstream; cryptography; random number generator; size 65 nm; time-dependent dielectric breakdown; time-to-breakdown; time-to-oxide breakdown; voltage stress; worst-case expected Internet use; Arrays; Electric breakdown; Generators; NIST; Radiation detectors; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits (VLSIC), 2011 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    2158-5601
  • Print_ISBN
    978-1-61284-175-5
  • Type

    conf

  • Filename
    5986112
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=549846