Title :
10 Gbps, 530 fJ/b optical transceiver circuits in 40 nm CMOS
Author :
Liu, Frankie ; Patil, Dinesh ; Lexau, Jon ; Amberg, Philip ; Dayringer, Michael ; Gainsley, Jon ; Moghadam, Hesam Fathi ; Zheng, Xuezhe ; Cunningham, John E. ; Krishnamoorthy, Ashok V. ; Alon, Elad ; Ho, Ron
Author_Institution :
Oracle Labs., Menlo Park, CA, USA
Abstract :
This paper describes 10 Gbps optical modulator and receiver circuits designed for high energy efficiency in a 40 nm process. The transmitter consumes 135 fJ/b when bonded to an external silicon photonic ring modulator. The receiver, at -15 dBm sensitivity, consumes 395 fJ/b when bonded to an external photodiode.
Keywords :
CMOS integrated circuits; optical modulation; optical transceivers; photodiodes; CMOS; bit rate 10 Gbit/s; external photodiode; external silicon photonic ring modulator; optical modulator; optical transceiver circuits; receiver circuits; size 40 nm; Calibration; Optical transmitters; Photodiodes; Photonics; Receivers; Silicon; Synchronization;
Conference_Titel :
VLSI Circuits (VLSIC), 2011 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-61284-175-5
