Title :
CsBr- InN/GaN photocathodes examined with photoelectron emission microscopy
Author :
Vaughn, Joel M. ; Wan, Congshang ; Kordesch, Martin E.
Author_Institution :
Dept. of Phys. & Astron., Ohio Univ., Athens, OH, USA
Abstract :
A promising cathode type is the CsBr/GaN photocathode (PC). These cathodes are constructed by depositing a CsBr layer on sputter deposited GaN or InN. The use of InGaN or InN substrates rather than GaN means that the photoelectrons can be excited by visible photons.
Keywords :
gallium compounds; indium compounds; photocathodes; photoelectron microscopy; sputter deposition; substrates; CsBr-InN-GaN; InGaN substrates; InN substrates; photocathodes; photoelectron emission microscopy; photoelectrons; sputter deposited GaN; Absorption; Cathodes; Gallium nitride; Optical films; Photonic band gap; Substrates; CsBr; GaN; InN; photocathode;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2011 24th International
Conference_Location :
Wuppertal
Print_ISBN :
978-1-4577-1243-2
Electronic_ISBN :
pending
