DocumentCode :
551336
Title :
Field emission spectroscopy studies on photo-sensitive p-doped Si-tip arrays
Author :
Bornmann, B. ; Mingels, S. ; Lützenkirchen-Hecht, D. ; Müller, G. ; Dams, F. ; Schreiner, R.
Author_Institution :
FB C Phys. Dept., Univ. of Wuppertal, Wuppertal, Germany
fYear :
2011
fDate :
18-22 July 2011
Firstpage :
101
Lastpage :
102
Abstract :
The influence of laser illumination on the integral as well as on the energy-resolved electron currents from well-defined p-doped Si-tip arrays was investigated. First results have provided stable cathode currents between 100 nA and 500 μA in a field range of 2-20 V/μm. Green laser illumination resulted in an enhanced cathode current and an increased population of the conduction band which can be seen in the spectra. Charging of the cathode surface, however, leads to a shift and broadening of the spectra which complicate their analysis. Therefore, further experiments with a rotatable cathode and a varying number of tips as well as with a tunable laser are planned.
Keywords :
cathodes; conduction bands; electron field emission; elemental semiconductors; lighting; silicon; Si; cathode current; cathode surface; conduction band; current 100 nA to 500 muA; energy-resolved electron currents; field emission spectroscopy; geen laser illumination; photo-sensitive p-doped Si-tip arrays; Cathodes; Current measurement; Lighting; Logic gates; Photonic band gap; Silicon; Surface emitting lasers; field emission spectroscopy; field emitter arrays; laser illumination; p-doped silicon tips; photo sensitivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2011 24th International
Conference_Location :
Wuppertal
ISSN :
pending
Print_ISBN :
978-1-4577-1243-2
Electronic_ISBN :
pending
Type :
conf
Filename :
6004582
Link To Document :
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