DocumentCode :
551343
Title :
Simulation of electron trajectories of a field emission electron source in triode configuration by using finite element methods
Author :
Prommesberger, C. ; Dams, F. ; Langer, C. ; Schreiner, R. ; Rutkowski, S. ; Bornmann, B. ; Mueller, G.
Author_Institution :
Fac. of Microsyst. Technol., Univ. of Appl. Sci. Regensburg, Regensburg, Germany
fYear :
2011
fDate :
18-22 July 2011
Firstpage :
115
Lastpage :
116
Abstract :
The finite element simulation program COMSOL Multiphysics® was used to simulate the emission efficiency of a silicon tip electron source in triode configuration for different geometries and electrode potentials. The simulation predicts a maximum emission efficiency of 84% for an optimized structure. In a second simulation a gate electrode was concentrically arranged above a single CNT column. Here, the efficiency was simulated as a function of gate hole geometry, electrode potentials and distances between the electrodes. The simulation shows that a conical shape of the gate hole results in an efficiency up to nearly 100%.
Keywords :
carbon nanotubes; electron field emission; finite element analysis; triodes; CNT column; COMSOL Multiphysics; electrode potentials; electron trajectory simulation; emission efficiency simulation; field emission electron source; finite element simulation program; gate electrode; gate hole geometry; silicon tip electron source; triode configuration; Anodes; Cathodes; Electric potential; Electron sources; Logic gates; Silicon; electron source simulation; simulation of electron trajectories;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2011 24th International
Conference_Location :
Wuppertal
ISSN :
pending
Print_ISBN :
978-1-4577-1243-2
Electronic_ISBN :
pending
Type :
conf
Filename :
6004589
Link To Document :
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