Generation of low-aberration beams of electrons based on nanosized Si-sponge field emission cathodes

Author

Semenenko, M. ; Evtukh, A. ; Steblova, O. ; Litovchenko, V. ; Yilmazoglu, O. ; Hartnagel, H.L. ; Pavlidis, D.

Author_Institution

V.Ye. Lashkaryov Inst. for Semicond. Phys., Nat. Acad. of Sci. of Ukraine, Kiev, Ukraine

fYear

2011

fDate

18-22 July 2011

Firstpage

127

Lastpage

128

Abstract

The electron field emission from Si-sponge nanostructures prepared by galvanic anodization of a Si wafer at low current density has been investigated. The reproducible resonant peaks have been revealed at the field emission induction and their origin was attributed with the Lorentzian dependence transmission functions. The sizes of the Si-quantum well and the SiO₂ barrier have been estimated by simulating of the energy distribution spectra of FE electrons within the resonance transitions and are 1.5-2.8 nm and 2 nm, respectively.

Keywords

aberrations; anodisation; cathodes; current density; electron beams; electron field emission; galvanising; nanostructured materials; semiconductor quantum wells; vacuum microelectronics; FE electrons; Lorentzian dependence transmission functions; current density; electron field emission; energy distribution spectra; field emission induction; galvanic anodization; low-aberration beams; nanosized silicon-sponge field emission cathodes; reproducible resonant peaks; resonance transitions; silicon-quantum well; silicon-sponge nanostructures; Current density; Electron beams; Etching; Iron; Nanostructures; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2011 24th International

Conference_Location

Wuppertal

ISSN

pending

Print_ISBN

978-1-4577-1243-2

Electronic_ISBN

pending

Type

conf

Filename

6004595