DocumentCode :
551350
Title :
Comparison of electron emission properties of silicon coated carbon nanotubes in O2 atmosphere
Author :
Bae, Woo Mi ; Lee, Su Woong ; Ha, An Na ; Lee, Eun Hye ; Woo, Hee Chul ; Eom, Young Ju ; Jang, Jin ; Park, Kyu Chang
Author_Institution :
Dept. of Inf. Display, Kyung-hee Univ., Seoul, South Korea
fYear :
2011
fDate :
18-22 July 2011
Firstpage :
131
Lastpage :
132
Abstract :
We studied the electron emission of silicon coated CNT with various O2 partial pressure. The electron emission currrent shows differen reduction rate with growth condition and gas pressure. However, a degradation rate of electron emission current of silicon coated CNTs show deareases compared with conventional CNTs. Enhanced life time with reduced degradation rate with silicon coated CNTs appear to silicon protection layer on CNTs.
Keywords :
carbon nanotubes; electron field emission; silicon; C-Si; electron emission currrent; electron emission properties; gas pressure; growth condition; oxygen atmosphere; oxygen partial pressure; reduced degradation rate; reduction rate; silicon coated carbon nanotubes; silicon protection layer; Anodes; Atmosphere; Carbon nanotubes; Degradation; Electron emission; Silicon; Substrates; O2 ambient; RAP (resist-assisted patterning); carbon nanotube; field emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2011 24th International
Conference_Location :
Wuppertal
ISSN :
pending
Print_ISBN :
978-1-4577-1243-2
Electronic_ISBN :
pending
Type :
conf
Filename :
6004597
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=551350
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