Comparison of electron emission properties of silicon coated carbon nanotubes in O2 atmosphere

Author

Bae, Woo Mi ; Lee, Su Woong ; Ha, An Na ; Lee, Eun Hye ; Woo, Hee Chul ; Eom, Young Ju ; Jang, Jin ; Park, Kyu Chang

Author_Institution

Dept. of Inf. Display, Kyung-hee Univ., Seoul, South Korea

fYear

2011

fDate

18-22 July 2011

Firstpage

131

Lastpage

132

Abstract

We studied the electron emission of silicon coated CNT with various O₂ partial pressure. The electron emission currrent shows differen reduction rate with growth condition and gas pressure. However, a degradation rate of electron emission current of silicon coated CNTs show deareases compared with conventional CNTs. Enhanced life time with reduced degradation rate with silicon coated CNTs appear to silicon protection layer on CNTs.

Keywords

carbon nanotubes; electron field emission; silicon; C-Si; electron emission currrent; electron emission properties; gas pressure; growth condition; oxygen atmosphere; oxygen partial pressure; reduced degradation rate; reduction rate; silicon coated carbon nanotubes; silicon protection layer; Anodes; Atmosphere; Carbon nanotubes; Degradation; Electron emission; Silicon; Substrates; O2 ambient; RAP (resist-assisted patterning); carbon nanotube; field emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2011 24th International

Conference_Location

Wuppertal

ISSN

pending

Print_ISBN

978-1-4577-1243-2

Electronic_ISBN

pending

Type

conf

Filename

6004597