DocumentCode
55164
Title
Resistive Switching in Ferromagnetic
Thin Films
Author
Alposta, I. ; Kalstein, A. ; Ghenzi, N. ; Bengio, S. ; Zampieri, G. ; Rubi, D. ; Levy, P.
Author_Institution
Centro Atomico Constituyentes (CNEA), Buenos Aires, Argentina
Volume
49
Issue
8
fYear
2013
fDate
Aug. 2013
Firstpage
4582
Lastpage
4585
Abstract
Ferromagnetic thin films of La2/3Ca1/3MnO3 manganite were grown by pulsed laser deposition, under different oxygen atmospheres, on silicon substrates. We performed structural, magnetic, spectroscopic, and electrical characterization of the films. Resistive switching between high and low resistance states was obtained upon pulsing with opposite polarities voltages. The I-V curves exhibit sharp transitions between these states. The RS properties are strongly dependant on the films oxygen stochiometry and on the compliance current used for producing the high to low transition. ON/OFF ratios as high as 1000 were obtained for optimal RS conditions. Obtained results are discussed within the framework of mobile oxygen vacancies.
Keywords
X-ray photoelectron spectra; calcium compounds; ferromagnetic materials; lanthanum compounds; magnetic thin films; pulsed laser deposition; stoichiometry; vacancies (crystal); I-V curves; LaCaMnO3; ON-OFF ratios; Si; compliance current; electrical properties; ferromagnetic thin films; magnetic properties; manganite; oxygen stochiometry; oxygen vacancies; polarities; pulsed laser deposition; resistance states; resistive switching; spectroscopic properties; structural properties; Electrodes; Magnetic hysteresis; Resistance; Saturation magnetization; Scanning electron microscopy; Switches; Temperature measurement; Ferromagnetism; RRAM memories; manganites; thin films;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2013.2258662
Filename
6566117
Link To Document