• DocumentCode
    551773
  • Title

    Research on the peculiar flashover phenomenon of the PCSS in SF6

  • Author

    Shi, Wei ; Jiang, Zenggong ; Fu, Zhanglong ; Wang, Mingqiang

  • Author_Institution
    Appl. Phys. Dept., Xi´´an Univ. of Technol., Xi´´an, China
  • Volume
    2
  • fYear
    2011
  • fDate
    29-31 July 2011
  • Abstract
    Flashover severely restricts the development of the photoconductive semiconductor switch (PCSS) in high-voltage and high power. This paper reported the peculiar phenomenon that the current pulse, when the flashover occurred, was lower and wider than the normal value. Based on the photon-activated charge domain model and semiconductor flashover mechanism, the reason, the influence of secondary electron emission avalanche on the output wave, was analyzed. The dipole domain was imported to describe the critical state where the lower and wider current pulse occurred during the flashover.
  • Keywords
    electron emission; flashover; photoconducting switches; PCSS; SF6; dipole domain; peculiar flashover phenomenon; photoconductive semiconductor switch; photon-activated charge domain model; secondary electron emission avalanche; semiconductor flashover mechanism; Electrodes; Flashover; Gallium arsenide; Photonics; Switches; PCSS; flashover; photon-activated charge domain; secondary electron emission avalanche; semi-insulating GaAs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics and Optoelectronics (ICEOE), 2011 International Conference on
  • Conference_Location
    Dalian
  • Print_ISBN
    978-1-61284-275-2
  • Type

    conf

  • DOI
    10.1109/ICEOE.2011.6013189
  • Filename
    6013189