Injection parameters determination of proton-implanted VCSELs

In the processing of proton implanted VCSELs, Au and SiO₂ are used as the mask to protect the surface against bombardment. Under the guidance of the LSS theory, a series of parameters are designed and optimized, such as the dose, the energy and the thickness of the mask. SRIM are employed to simulation the designed parameters. It can be achieved to fabricating the proton implanted VCSELs under the condition of three times bombardment and suitable thickness of mask, where the energy are 330kev, 250kev, 160kev and the mask are 1.5μm, 0.5μm. When the parameters are used to fabricate the VCSELs, we get a device performance of 0.5mw output power, and the threshold current is 6.5mA, which is similar to the reported earlier.