DocumentCode :
551867
Title :
Ultrafast rising of output electric impulse of high gain semi-insulated GaAs PCSS
Author :
Ji, WeiLi ; Shi, Wei ; Jia, WanLi
Author_Institution :
Appl. Phys. Dept., Xi´´an Univ. of Technol., Xi´´an, China
Volume :
3
fYear :
2011
fDate :
29-31 July 2011
Abstract :
For the high gain semi-insulated Gallium arsenide (GaAs) photoconductive switches (PCSS), the output current pulse has ultra-fast rise character, the rise time can be even less than that of the trigger laser pulse. So PCSS is the most promising generation of THz radiation because of its character of ultra-fast and high peak power. The experiments result show that the high gain electrical pulse whose rise time is 1.086ns is obtained from GaAs PCSS. The streamer mode is proposed to explain the ultra-fast rise character. The electrical field distortion caused by optically activated charge domain and avalanche impact ionization are the key factors for the streamer formation and propagation. The paper hold the fast propagation of streamer built up the ultra-fast rise character of these switches.
Keywords :
III-V semiconductors; gallium arsenide; impact ionisation; photoconducting switches; GaAs; THz radiation; activated charge domain; avalanche impact ionization; electrical field distortion; high gain electrical pulse; high gain semiinsulated GaAs PCSS; output current pulse; output electric impulse; photoconductive switch; streamer formation; streamer mode; streamer propagation; ultra-fast rise character; Gallium arsenide; Lasers; Optical distortion; Optical propagation; Optical switches; Space charge; Gallium arsenide (GaAs); photoactivated charge domain; photoconductive switches; streamer mode; ultrafast rising;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Optoelectronics (ICEOE), 2011 International Conference on
Conference_Location :
Dalian
Print_ISBN :
978-1-61284-275-2
Type :
conf
DOI :
10.1109/ICEOE.2011.6013360
Filename :
6013360
Link To Document :
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