DocumentCode :
551883
Title :
The study of transmittance spectra of ZnO and indium doped ZnO films
Author :
Peng, L.P. ; Wu, W.O. ; Wang, X.M. ; Fang, L. ; Ruan, H.B.
Author_Institution :
Rearch Center of Laser Fusion, CAEP, Mianyang, China
Volume :
3
fYear :
2011
fDate :
29-31 July 2011
Abstract :
ZnO and indium doped ZnO films were prepared by radio frequency magnetron sputtering under strong magnetic field. The structure and morphology of the films were measured by X-ray diffraction and SEM, and the transmittance spectra of the films were measured by a double-beam ultraviolet/visible/near infrared spectrophotometer in the range of 300-2400nm. It was found that ZnO and indium doped ZnO films are hexagonal wurtzite structure with c-axis perpendicular to the substrates. ZnO film shows a smooth surface with intense grains, while the surface of indium doped ZnO film is rough with loose grains. Both ZnO and indium doped ZnO show high transmittance in the visible range and exhibit sharp adsorption edge in the ultraviolet. The low transmittance of indium ZnO film in the infrared region is attributed to high carrier concentration in the films, which is different from ZnO film.
Keywords :
II-VI semiconductors; X-ray diffraction; carrier density; indium; infrared spectra; rough surfaces; scanning electron microscopy; semiconductor thin films; sputter deposition; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; SEM; X-ray diffraction; ZnO; ZnO:In; adsorption edge; carrier concentration; double-beam ultraviolet-visible-near infrared spectrophotometer; hexagonal wurtzite structure; indium doped films; magnetic field; morphology; radio frequency magnetron sputtering; rough surface; smooth surface; structural property; transmittance spectra; wavelength 300 nm to 2400 nm; Dielectrics; Magnetic field measurement; Magnetic films; Optical films; Sputtering; Zinc oxide; ZnO films; optical properties; transmittance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Optoelectronics (ICEOE), 2011 International Conference on
Conference_Location :
Dalian, Liaoning
Print_ISBN :
978-1-61284-275-2
Type :
conf
DOI :
10.1109/ICEOE.2011.6013386
Filename :
6013386
Link To Document :
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