DocumentCode :
551898
Title :
Error correction of theory model in process-stress accelerated test
Author :
Chunsheng, Guo ; Du Qianqian ; Shiwei, Feng
Author_Institution :
Reliability Lab., Beijing Univ. of Technol., Beijing, China
Volume :
3
fYear :
2011
fDate :
29-31 July 2011
Abstract :
To correct the error in theoretical model of process-stress accelerated test, a new calculation method is proposed. The new method, based on computer-aided calculation, can significantly reduce the error of the model. Theoretical data is calculated using both the novel model algorithm, which is the root test method, and the old model algorithm. The results show that the old model algorithm can generate errors more than 13% in the activation energy, and of errors more than 150% in the extrapolated lifetime(Q≤1.0eV), While the novel model algorithm generates errors in less than 1% in activation energy, and errors less than 4.1% in the extrapolated lifetime.
Keywords :
error correction; life testing; semiconductor device reliability; semiconductor device testing; activation energy; computer-aided calculation; error correction; extrapolated lifetime; process-stress accelerated test; root test method; Reliability theory; Accelerated Test; Correction Error; Process Stress; Theoretical Model;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Optoelectronics (ICEOE), 2011 International Conference on
Conference_Location :
Dalian, Liaoning
Print_ISBN :
978-1-61284-275-2
Type :
conf
DOI :
10.1109/ICEOE.2011.6013402
Filename :
6013402
Link To Document :
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