• DocumentCode
    551898
  • Title

    Error correction of theory model in process-stress accelerated test

  • Author

    Chunsheng, Guo ; Du Qianqian ; Shiwei, Feng

  • Author_Institution
    Reliability Lab., Beijing Univ. of Technol., Beijing, China
  • Volume
    3
  • fYear
    2011
  • fDate
    29-31 July 2011
  • Abstract
    To correct the error in theoretical model of process-stress accelerated test, a new calculation method is proposed. The new method, based on computer-aided calculation, can significantly reduce the error of the model. Theoretical data is calculated using both the novel model algorithm, which is the root test method, and the old model algorithm. The results show that the old model algorithm can generate errors more than 13% in the activation energy, and of errors more than 150% in the extrapolated lifetime(Q≤1.0eV), While the novel model algorithm generates errors in less than 1% in activation energy, and errors less than 4.1% in the extrapolated lifetime.
  • Keywords
    error correction; life testing; semiconductor device reliability; semiconductor device testing; activation energy; computer-aided calculation; error correction; extrapolated lifetime; process-stress accelerated test; root test method; Reliability theory; Accelerated Test; Correction Error; Process Stress; Theoretical Model;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics and Optoelectronics (ICEOE), 2011 International Conference on
  • Conference_Location
    Dalian, Liaoning
  • Print_ISBN
    978-1-61284-275-2
  • Type

    conf

  • DOI
    10.1109/ICEOE.2011.6013402
  • Filename
    6013402