DocumentCode
551898
Title
Error correction of theory model in process-stress accelerated test
Author
Chunsheng, Guo ; Du Qianqian ; Shiwei, Feng
Author_Institution
Reliability Lab., Beijing Univ. of Technol., Beijing, China
Volume
3
fYear
2011
fDate
29-31 July 2011
Abstract
To correct the error in theoretical model of process-stress accelerated test, a new calculation method is proposed. The new method, based on computer-aided calculation, can significantly reduce the error of the model. Theoretical data is calculated using both the novel model algorithm, which is the root test method, and the old model algorithm. The results show that the old model algorithm can generate errors more than 13% in the activation energy, and of errors more than 150% in the extrapolated lifetime(Q≤1.0eV), While the novel model algorithm generates errors in less than 1% in activation energy, and errors less than 4.1% in the extrapolated lifetime.
Keywords
error correction; life testing; semiconductor device reliability; semiconductor device testing; activation energy; computer-aided calculation; error correction; extrapolated lifetime; process-stress accelerated test; root test method; Reliability theory; Accelerated Test; Correction Error; Process Stress; Theoretical Model;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics and Optoelectronics (ICEOE), 2011 International Conference on
Conference_Location
Dalian, Liaoning
Print_ISBN
978-1-61284-275-2
Type
conf
DOI
10.1109/ICEOE.2011.6013402
Filename
6013402
Link To Document