DocumentCode
551984
Title
Novel InGaZnO-based TFT for system-on-panel applications
Author
Liu, Po-Tsun ; Teng, Li-Feng ; Fan, Yang-Shun ; Fuh, Chur-Shyang ; Chou, Yi-Teh ; Wang, Wei-Ya ; Shieh, Han-Ping D.
Author_Institution
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2011
fDate
4-8 July 2011
Firstpage
91
Lastpage
92
Abstract
In this study, we have successfully fabricated the IGZO-based resistive nonvolatile memory cells, high-performance TFTs, and high-gain ambipolar TFTs, which would easily be integrated on a single panel for system-on-panel technology.
Keywords
flat panel displays; gallium compounds; indium compounds; thin film transistors; zinc compounds; InGaZnO; flat panel displays; high-gain ambipolar TFT; resistive nonvolatile memory cells; system-on-panel applications; Inverters; Nitrogen; Pentacene; Performance evaluation; Resistance; Thin film transistors; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Opto-Electronics and Communications Conference (OECC), 2011 16th
Conference_Location
Kaohsiung
Print_ISBN
978-1-61284-288-2
Electronic_ISBN
978-986-02-8974-9
Type
conf
Filename
6015054
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