Title :
Nonlinear optical absorption in a GaN quantum dot
Author :
Shojaei, S. ; Asgari, A.
Author_Institution :
Res. Inst. for Appl. Phys. & Astron., Photonic Group, Univ. of Tabriz, Tabriz, Iran
Abstract :
The nonlinear optical absorption emerged from biexciton states in a disk like GaN quantum dot is studied through density matrix approach and variation method. The effect of dot size and optical intensity are clarified.
Keywords :
III-V semiconductors; biexcitons; gallium compounds; nonlinear optical susceptibility; semiconductor quantum dots; variational techniques; visible spectra; wide band gap semiconductors; GaN; biexciton states; density matrix theory; nonlinear optical absorption; optical intensity; quantum dot; variation method; Absorption; Excitons; Gallium nitride; Nonlinear optics; Quantum dot lasers; Quantum dots; Resonant frequency;
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2011 16th
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-288-2
Electronic_ISBN :
978-986-02-8974-9
