• DocumentCode
    552080
  • Title

    Enhanced surface antireflection by sharpening vertically aligned silicon nanowires

  • Author

    Wu, Kai-Chung ; Hung, Yung-Jr ; Lee, San-Liang ; Pan, Yen-Ting

  • Author_Institution
    Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
  • fYear
    2011
  • fDate
    4-8 July 2011
  • Firstpage
    339
  • Lastpage
    340
  • Abstract
    Enhanced antireflection by sharpening vertically aligned silicon nanowires (SiNWs) is demonstrated with simple fabrication procedures over a large area. Enough light trapping and ~92% solar weighted absorption can be achieved with very short SiNWs.
  • Keywords
    elemental semiconductors; nanowires; reflectivity; silicon; surface treatment; Si; enhanced surface antireflection; light trapping; simple fabrication procedures; solar weighted absorption; vertically aligned silicon nanowires; Etching; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Opto-Electronics and Communications Conference (OECC), 2011 16th
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-61284-288-2
  • Electronic_ISBN
    978-986-02-8974-9
  • Type

    conf

  • Filename
    6015153
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=552080