• DocumentCode
    552083
  • Title

    Photovoltaic response of nine-layer coupled InGaAs quantum dots

  • Author

    Chuang, K.Y. ; Tzeng, T.E. ; Tzeng, K.D. ; Lay, T.S.

  • fYear
    2011
  • fDate
    4-8 July 2011
  • Firstpage
    345
  • Lastpage
    346
  • Abstract
    In order to enhance absorption at infrared range for GaAs based solar cell, we insert the nine-layer of vertically coupled InGaAs quantum dots (QDs) into the active layer.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; infrared spectra; photovoltaic effects; semiconductor quantum dots; solar cells; GaAs based solar cell; GaAs-InGaAs; active layer; enhance absorption; infrared range; nine-layer coupled InGaAs quantum dots; photovoltaic response; vertically coupled InGaAs quantum dots; Absorption; Current density; Gallium arsenide; Indium gallium arsenide; Photovoltaic cells; Quantum dots; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Opto-Electronics and Communications Conference (OECC), 2011 16th
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-61284-288-2
  • Electronic_ISBN
    978-986-02-8974-9
  • Type

    conf

  • Filename
    6015156
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=552083