Title :
Photovoltaic response of nine-layer coupled InGaAs quantum dots
Author :
Chuang, K.Y. ; Tzeng, T.E. ; Tzeng, K.D. ; Lay, T.S.
Abstract :
In order to enhance absorption at infrared range for GaAs based solar cell, we insert the nine-layer of vertically coupled InGaAs quantum dots (QDs) into the active layer.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared spectra; photovoltaic effects; semiconductor quantum dots; solar cells; GaAs based solar cell; GaAs-InGaAs; active layer; enhance absorption; infrared range; nine-layer coupled InGaAs quantum dots; photovoltaic response; vertically coupled InGaAs quantum dots; Absorption; Current density; Gallium arsenide; Indium gallium arsenide; Photovoltaic cells; Quantum dots; Temperature measurement;
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2011 16th
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-288-2
Electronic_ISBN :
978-986-02-8974-9
