Title :
Stripe width dependence of internal quantum efficiency and carrier injection delay in lateral current injection GaInAsP/InP lasers
Author :
Futami, M. ; Shindo, T. ; Okumura, T. ; Osabe, R. ; Takahashi, D. ; Koguchi, T. ; Amemiya, T. ; Nishiyama, N. ; Arai, S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
Internal quantum efficiency and carrier injection delay time in lateral-current-injection (LCI) lasers fabricated on a semi-insulating (SI)-InP substrate were evaluated for various stripe widths. As the results, it was confirmed that narrower stripe width (<; 2 μm) can give better static and dynamic performances.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; semiconductor lasers; GaInAsP-InP; carrier injection delay time; internal quantum efficiency; lateral current injection lasers; semiconductor lasers; stripe width dependence; Delay; Facsimile;
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2011 16th
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-288-2
Electronic_ISBN :
978-986-02-8974-9
