DocumentCode :
552240
Title :
High performance 1180nm InGaAs QDs laser by molecular beam epitaxy
Author :
Tzeng, T.E. ; Lin, T.Y. ; Lay, T.S.
Author_Institution :
Dept. of Photonics, Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fYear :
2011
fDate :
4-8 July 2011
Firstpage :
683
Lastpage :
684
Abstract :
Continuous-wave and pulse lasing are achieved at 1.18μm for In0.75Ga0.25As quantum dots structure grown on GaAs substrate. The threshold current density of 700A/cm2, slope efficiency of 0.279mW/mA, and maximum output power of 40mW are obtained.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical pulse generation; quantum dot lasers; In0.75Ga0.25As-GaAs; continuous wave lasing; molecular beam epitaxy; power 40 mW; pulse lasing; quantum dots laser; wavelength 1180 nm; Gallium arsenide; Laser modes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2011 16th
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-288-2
Electronic_ISBN :
978-986-02-8974-9
Type :
conf
Filename :
6015323
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=552240
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