• DocumentCode
    552242
  • Title

    Optical emission for InGaAs quantum dots with anodic-aluminum-oxide membrane

  • Author

    Chuang, K.Y. ; Yang, K.L. ; Tzeng, T.E. ; Lay, T.S.

  • Author_Institution
    Dept. of Photonics, Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
  • fYear
    2011
  • fDate
    4-8 July 2011
  • Firstpage
    687
  • Lastpage
    688
  • Abstract
    Anodic-aluminum-oxide (AAO) membrane was bonded on the surface of self-assembled InGaAs quantum dots (QDs) samples to investigate the photonic crystal effect and optical coupling effect.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; membranes; photoluminescence; photonic crystals; self-assembly; semiconductor quantum dots; InGaAs-Al2O3; anodic-aluminum-oxide membrane; optical coupling effect; optical emission; photonic crystal effect; quantum dots; self-assembly; Educational institutions; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Photonic crystals; Photonics; Quantum dots;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Opto-Electronics and Communications Conference (OECC), 2011 16th
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-61284-288-2
  • Electronic_ISBN
    978-986-02-8974-9
  • Type

    conf

  • Filename
    6015325
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=552242