DocumentCode :
552242
Title :
Optical emission for InGaAs quantum dots with anodic-aluminum-oxide membrane
Author :
Chuang, K.Y. ; Yang, K.L. ; Tzeng, T.E. ; Lay, T.S.
Author_Institution :
Dept. of Photonics, Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fYear :
2011
fDate :
4-8 July 2011
Firstpage :
687
Lastpage :
688
Abstract :
Anodic-aluminum-oxide (AAO) membrane was bonded on the surface of self-assembled InGaAs quantum dots (QDs) samples to investigate the photonic crystal effect and optical coupling effect.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; membranes; photoluminescence; photonic crystals; self-assembly; semiconductor quantum dots; InGaAs-Al2O3; anodic-aluminum-oxide membrane; optical coupling effect; optical emission; photonic crystal effect; quantum dots; self-assembly; Educational institutions; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Photonic crystals; Photonics; Quantum dots;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2011 16th
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-288-2
Electronic_ISBN :
978-986-02-8974-9
Type :
conf
Filename :
6015325
Link To Document :
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