• DocumentCode
    552263
  • Title

    Preparation and Optical properties of AlN films using self-prepared AlN target

  • Author

    Shi, Tianshi ; Gu, Feng ; Wang, Linjun ; Shen, Yue

  • Author_Institution
    Sch. of Mater. Sci. & Eng., Shanghai Univ., Shanghai, China
  • fYear
    2011
  • fDate
    4-8 July 2011
  • Firstpage
    731
  • Lastpage
    732
  • Abstract
    Aluminum nitride (AlN) films were deposited on FTO substrates by RF sputtering using self-prepared AlN target. The structure and optical properties of AlN films were studied by XRD, SEM and UV/VIS spectrum.
  • Keywords
    III-V semiconductors; X-ray diffraction; aluminium compounds; scanning electron microscopy; semiconductor growth; semiconductor thin films; sputter deposition; ultraviolet spectra; visible spectra; wide band gap semiconductors; AlN; FTO substrates; RF sputtering; SEM; SnO2:F; UV-vis spectrum; XRD; aluminum nitride films; optical properties; self-prepared target; structural properties; Atmospheric measurements; Educational institutions; Magnetic films; Particle measurements; Pulse measurements; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Opto-Electronics and Communications Conference (OECC), 2011 16th
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-61284-288-2
  • Electronic_ISBN
    978-986-02-8974-9
  • Type

    conf

  • Filename
    6015347
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=552263