Title :
Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier
Author :
Chiu, Ching-Hsueh ; Tu, Po-Min ; Chang, Chun-Yen ; Huang, Shih-Cheng ; Chang, Jet-Rung ; Zan, Hsiao-Wen ; Kuo, Hao-Chung ; Hsu, Chih-Peng
Author_Institution :
Dept. of Photonics, Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
The UV LEDs with quaternary InAlGaN barrier exhibit higher radiative recombination rate and low efficiency droop at a high injection current because of the better band-offset ratio and the higher carrier mobility.
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; electron-hole recombination; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; InAlGaN; InGaN; InGaN-based UV light-emitting diodes; band-offset ratio; carrier mobility; efficiency droop reduction; injection current; quaternary InAlGaN barrier; radiative recombination rate; Atmospheric measurements; Light emitting diodes; Particle measurements; Quantum well devices;
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2011 16th
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-288-2
Electronic_ISBN :
978-986-02-8974-9
