DocumentCode :
552337
Title :
Hall effect sensors performance investigation using three-dimensional simulations
Author :
Paun, Maria-Alexandra ; Sallese, Jean-Michel ; Kayal, Maher
Author_Institution :
STI-IEL-Electron. Lab., Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
fYear :
2011
fDate :
16-18 June 2011
Firstpage :
450
Lastpage :
455
Abstract :
Several Hall effect sensors were modeled and evaluated regarding the Hall voltage and sensitivity using 3D physical simulations. For accurate results the numerical offset and its temperature drift were analyzed. The versatility of the simulation allows various Hall sensor implementations. The simulation procedure could guide the designer in choosing the Hall cell optimum fabrication process, shape and dimensions in terms of the performances envisaged to be achieved.
Keywords :
Hall effect transducers; computerised instrumentation; digital simulation; numerical analysis; 3D physical simulation; Hall cell optimum fabrication dimension; Hall cell optimum fabrication process; Hall cell optimum fabrication shape; Hall effect sensor performance investigation; numerical offset; temperature drift; three-dimensional physical simulation; Electric potential; Electrostatics; Magnetic fields; Mathematical model; Numerical models; Sensitivity; Sensors; 3D physical simulations; Hall effect sensor; numerical offset/drift;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2011 Proceedings of the 18th International Conference
Conference_Location :
Gliwice
Print_ISBN :
978-1-4577-0304-1
Type :
conf
Filename :
6015957
Link To Document :
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