Physics-based modeling of nonplanar nanodevices (FinFETs) and their response to radiation

The paper presents details of our physics-based three-dimensional (3D) device modeling coupled in mixed-mode with external load circuit and parasitics, which enabled accurate simulation of single-event effects (SEEs) in nonplanar nano-scale devices, such as MultiGate Field Effect Transistors (MuGFETs) or FinFETs. We show the importance of correct device physics models, including mobility in different crystal planes of strained silicon, as well as effects of parasitics and load circuit modeling, for correct computation of both steady-state and transient characteristics of FinFETs. Mixed-mode coupling of a realistic load circuit, including experimental parasitics, with the 3D TCAD device model, is critical to be able to compute single-event transient current waveforms and charge collection characteristics that reflect well experimental results.