Verilog-A model of a high-k HfO2-Ta2O5 capacitor

Author

Angelov, George ; Bonev, Nikolay ; Rusev, Rostislav ; Hristov, Marin ; Paskaleva, Albena ; Spassov, Dentcho

Author_Institution

Dept. of Microelectron., Tech. Univ. of Sofia, Sofia, Bulgaria

fYear

2011

fDate

16-18 June 2011

Firstpage

470

Lastpage

475

Abstract

A circuit simulation model of a MOS capacitor using high-k HfO₂-Ta₂O₅ mixed layer structure is developed using Verilog-A hardware description language. Model equations are based on the BSIM3v3 model core. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics are simulated in Spectre circuit simulator within Cadence CAD system and validated against measurements of stack structure.

Keywords

CAD; MOS capacitors; circuit simulation; hafnium compounds; hardware description languages; tantalum compounds; BSIM3v3 model core; Cadence CAD system; HfO₂-Ta₂O₅; MOS capacitor; Spectre circuit simulator; Verilog-A hardware description language; capacitance-voltage characteristics; circuit simulation; current-voltage characteristics; high-k capacitor; high-k mixed layer structure; Capacitance; Hafnium compounds; Integrated circuit modeling; Logic gates; Mathematical model; Solid modeling; Substrates; Device modeling; Spectre; Verilog-A; circuit simulation; compact models; high-k gate dielectric;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and Systems (MIXDES), 2011 Proceedings of the 18th International Conference

Conference_Location

Gliwice

Print_ISBN

978-1-4577-0304-1

Type

conf

Filename

6015961