Title :
Verilog-A model of a high-k HfO2-Ta2O5 capacitor
Author :
Angelov, George ; Bonev, Nikolay ; Rusev, Rostislav ; Hristov, Marin ; Paskaleva, Albena ; Spassov, Dentcho
Author_Institution :
Dept. of Microelectron., Tech. Univ. of Sofia, Sofia, Bulgaria
Abstract :
A circuit simulation model of a MOS capacitor using high-k HfO2-Ta2O5 mixed layer structure is developed using Verilog-A hardware description language. Model equations are based on the BSIM3v3 model core. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics are simulated in Spectre circuit simulator within Cadence CAD system and validated against measurements of stack structure.
Keywords :
CAD; MOS capacitors; circuit simulation; hafnium compounds; hardware description languages; tantalum compounds; BSIM3v3 model core; Cadence CAD system; HfO2-Ta2O5; MOS capacitor; Spectre circuit simulator; Verilog-A hardware description language; capacitance-voltage characteristics; circuit simulation; current-voltage characteristics; high-k capacitor; high-k mixed layer structure; Capacitance; Hafnium compounds; Integrated circuit modeling; Logic gates; Mathematical model; Solid modeling; Substrates; Device modeling; Spectre; Verilog-A; circuit simulation; compact models; high-k gate dielectric;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2011 Proceedings of the 18th International Conference
Conference_Location :
Gliwice
Print_ISBN :
978-1-4577-0304-1
