Technology and electrical design of IGBT

Author

Shelibak, Ibrahim ; Nelayev, Vladislav ; Artamonov, Artem

Author_Institution

Micro- & Nanoelectron. Dept., Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus

fYear

2011

fDate

16-18 June 2011

Firstpage

562

Lastpage

564

Abstract

Power semiconductor devices are important microelectronic components determined by the efficiency, size, and cost of electronic systems for energy application. Exact design of the modern element base for microelectronics provides reliable operation of the system. The paper presents and discusses the results of the IGBT structure technology design. These results were obtained by means of Silvaco software package intended for technology/device simulation.

Keywords

insulated gate bipolar transistors; power transistors; semiconductor device models; IGBT structure technology design; Silvaco software package; device simulation; electrical design; important microelectronic components; microelectronics; of electronic systems; power semiconductor devices; technology simulation; Annealing; Boron; Insulated gate bipolar transistors; Manufacturing; Microelectronics; P-n junctions; Transistors; IGBT transistor; design; device; electrical characteristics; simulation; technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and Systems (MIXDES), 2011 Proceedings of the 18th International Conference

Conference_Location

Gliwice

Print_ISBN

978-1-4577-0304-1

Type

conf

Filename

6015987