DocumentCode
552381
Title
Enhanced NQS lauritzen diode model
Author
Sochová, Lenka ; Bet´ak, Petr ; Plojhar, Jan
Author_Institution
Characterization & Modeling, ON Design Czech s. r. o, Brno, Czech Republic
fYear
2011
fDate
16-18 June 2011
Firstpage
82
Lastpage
84
Abstract
This paper deals with enhancement of a PN diode standard model towards including substrate PN junction, and reverse recovery effect models. This leads to improvement in power management, EMC and switching application design.
Keywords
electromagnetic compatibility; p-n junctions; semiconductor device models; semiconductor diodes; EMC; NQS lauritzen diode model; PN diode standard model; power management; reverse recovery effect models; substrate PN junction; switching application design; Current measurement; Data models; Integrated circuit modeling; Junctions; Mathematical model; SPICE; Substrates; Ebers-Moll model; NQS Lauritzen model; macro-model; reverse recovery time; substrate current model;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits and Systems (MIXDES), 2011 Proceedings of the 18th International Conference
Conference_Location
Gliwice
Print_ISBN
978-1-4577-0304-1
Type
conf
Filename
6016040
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