Modelling of silicided and blocked poly-Si resistors in 90 nm CMOS with the CMC-R2 model

The temperature dependency of silicided and blocked p-doped polysilicon resistors is examined in a 90 nm CMOS Flash technology. The blocked resistors are modeled in two portions to describe the silicided and the blocked regions separately. A process-control-monitor (PCM) like layout of the resistor test structures makes it possible to measure the resistance either in a lab environment manually or in the fabrication environment statistically. Current-driven four probe measurements are applied. It turns out that automatic factory-based measurements are well suited for the silicided resistors due to the better statistics and the quite linear temperature coefficient, whereas for the blocked resistors, due to the small and nonlinear temperature coefficient, precise manual measurements at minimum (-40 °C) and maximum (175 °C) operating temperatures are required to deliver an acceptable model.