Vertical-Slit Field-Effect Transistor (VeSFET) - design space exploration and DC model

This paper presents an in-depth discussion of the Vertical-Slit Field-Effect Transistor´s (VeSFET´s) operation. The junction-less twin gate VeSFET is the basic component of a new 3D VeSTIC technology proposed by Maly. Our numerical TCAD simulations confirm the attractive properties of VeSFETs, such as high I_on to I_off ratio, low leakage currents, and effective current control by independently biased symmetric gates. These simulations serve as a backbone for an analytical approximation of the VeSFET characteristics, and the first, rudimentary compact DC model for circuit simulation has been developed.