DocumentCode
553242
Title
A comprehensive physics-based power MOSFET model in VHDL-AMS for circuit simulations
Author
Gohler, Lutz ; Rose, M.
Author_Institution
Lausitz Univ. Of Appl. Sci., Senftenberg, Germany
fYear
2011
fDate
Aug. 30 2011-Sept. 1 2011
Firstpage
1
Lastpage
9
Abstract
This paper presents a comprehensive Power MOSFET model for system and circuit simulation and its implementation in VHDL-AMS. The equation set features a non-quasi-static description of the body diode, a charge model for the inner MOSFET, self-heating and the inclusion of major parasitics. A comparison between simulation and measurement proves the good quality obtained.
Keywords
circuit simulation; electronic engineering computing; hardware description languages; power MOSFET; semiconductor device models; VHDL-AMS; body diode; charge model; circuit simulations; comprehensive physics-based power MOSFET model; nonquasistatic description; Equations; Integrated circuit modeling; Logic gates; Mathematical model; Numerical models; Power MOSFET; Device modeling; MOS device; MOSFET; Power semiconductor device; Simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location
Birmingham
Print_ISBN
978-1-61284-167-0
Electronic_ISBN
978-90-75815-15-3
Type
conf
Filename
6020095
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