Title :
Comparison of the semiconductor losses in self commutated inverter topologies for HVDC
Author :
Eckel, Hans-Gunter ; Runge, Julian
Author_Institution :
Univ. of Rostock, Rostock, Germany
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
For self commutated HVDC systems, two-level and modular multi-level converters (M2LC) are used. In this paper, the M2LC is compared to cascaded two-level inverters. The necessary switching frequency for a given number of series connected two-level inverters is calculated, assuming the same stored energy in the inductances as the M2LC. The loss balance between upper and lower IGBT and between IGBT and diode is evaluated. The achievable output power, the efficiency and the surge current stress show a strong dependence on the switching frequency. So the main optimization parameter for output power and efficiency is the switching frequency, whereas the circuit topology has a strong impact on passive components and on the inverter performance under fault conditions.
Keywords :
HVDC power convertors; commutation; diodes; fault diagnosis; insulated gate bipolar transistors; invertors; IGBT; M2LC; circuit topology; diode; fault condition; self commutated HVDC system; self commutated inverter topology; semiconductor loss; series connected two-level inverter; surge current stress; switching frequency; two-level modular multilevel converter; Insulated gate bipolar transistors; Inverters; Power generation; Rectifiers; Semiconductor diodes; Switching frequency; Switching loss; HVDC; IGBT; Voltage Source Inverters (VSI);
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3