Title :
IGBT series connection under Active Voltage Control
Author :
Weiwei He ; Palmer, Pere ; Xueqiang Zhang ; Snook, Megan ; Zhihan Wang
Author_Institution :
Dept. of Eng., Univ. of Cambridge, Cambridge, UK
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
In this paper an Active Voltage Control (AVC) technique is presented, for series connection of insulated-gate-bipolar-transistors (IGBT) and control of diode recovery. The AVC technique can control the switching trajectory of an IGBT according to a pre-set reference signal. In series connections, every series connected IGBT follows the reference and so that the dynamic voltage sharing is achieved. For the static voltage balancing, the AVC technique can clamp the highest collector-to-emitter voltage to a pre-set clamping voltage level. By selecting the value of the clamping voltage, the difference among series connected IGBTs can be controlled in an accepted range. Another key advantage for AVC is that by changing the reference signal at turn-on, the diode recovery can be optimized.
Keywords :
insulated gate bipolar transistors; reference circuits; voltage control; IGBT series connection; active voltage control; collector-to-emitter voltage; diode recovery control; dynamic voltage sharing; insulated gate bipolar transistors; preset clamping voltage level; preset reference signal; static voltage balancing; switching trajectory control; Automatic voltage control; Insulated gate bipolar transistors; Logic gates; Switches; Transient analysis; Diode; IGBT; Power semiconductor device; Soft switching;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3