Title :
Negative differential miller capacitance during switching transients of IGBTs
Author :
Bohmer, Jurgen ; Schumann, Jorg ; Eckel, Hans-Gunter
Author_Institution :
Inst. of Electr. Power Eng., Univ. of Rostock, Rostock, Germany
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
It is well known, that the miller capacitance, which is important for the dv/dt controllability of IGBT, has a strong voltage dependency. In this paper, the dependency of the miller capacitance on the collector current and the gate drive conditions is investigated. The differential capacitance might become negative, which leads to a self turn-off process during the switching transient.
Keywords :
driver circuits; insulated gate bipolar transistors; switching transients; IGBT; collector current; dv/dt controllability; gate drive conditions; negative differential miller capacitance; switching transients; voltage dependency; Capacitance; Charge carrier density; Current measurement; Electric fields; Insulated gate bipolar transistors; Logic gates; Transient analysis; IGBT; MOS device;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
