DocumentCode
553393
Title
A robust top structure design in a field-stop emitter-implant trench-gate IGBT for improved short circuit ruggedness
Author
Alessandria, A. ; Fragapane, Leonardo
Author_Institution
STMicroelectron. s.r.l., Catania, Italy
fYear
2011
fDate
Aug. 30 2011-Sept. 1 2011
Firstpage
1
Lastpage
8
Abstract
This paper is related to the top structure design optimization in the case of a 1.2KV Field-Stop (FS) Emitter-implant (EI) Trench-gate IGBT. In particular we focused our attention on the electrical behavior of the device and, above all, on some specific electrical characteristics in order to address all the applications where the short-circuit withstanding time is a key parameter. The results of the optimization are shown in this paper through a simulation study.
Keywords
insulated gate bipolar transistors; optimisation; short-circuit currents; electrical characteristics; emitter-implant IGBT; field-stop IGBT; optimization; robust top structure; short circuit ruggedness; trench-gate IGBT; voltage 1.2 kV; Electric variables; Insulated gate bipolar transistors; Logic gates; Numerical simulation; Performance evaluation; Strips; Transistors; Design; IGBT; Power semiconductor device; Simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location
Birmingham
Print_ISBN
978-1-61284-167-0
Electronic_ISBN
978-90-75815-15-3
Type
conf
Filename
6020250
Link To Document