Oxygen-Related Thermal Donor Formation in Dopant-Rich Compensated Czochralski Silicon

The thermal donor (TD) generation in dopant-rich compensated Czochralski silicon was studied by pulling an ingot from a feedstock containing large amounts of donors and acceptors. In a wafer located in the vicinity of the change of conductivity type, thermal donors were formed and the evolution of their concentration was similar to that in noncompensated lowly boron-doped silicon. Thus, simultaneous high densities of both boron and phosphorus do not have a significant impact on the TD formation. This brings the experimental evidence that for a given oxygen concentration and annealing temperature, the TD formation is controlled by the electron density.